Negative Capacitance Double-Gate Vertical Tunnel FET with Improved Subthreshold Characteristics
- Resource Type
- Conference
- Authors
- Tian, Guoliang; Xu, Gaobo; Yin, Huaxiang; Li, Lianlian; Yan, Gangping; Luo, Yanna; Sun, Xiaoting
- Source
- 2022 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2022 China. :1-3 Jun, 2022
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Performance evaluation
TFETs
Capacitance
Hysteresis
SOI double-gate NCTFET
ferroelectric
negative capacitance
- Language
Negative capacitance (NC) double-gate vertical tunnel FET (DG-NCTFET) is proposed and the impacts of ferroelectric critical parameters on the device's performance have been investigated. When the capacitance matching condition is satisfied, NC effects substantially improve the electrical characteristics of TFET to achieve ultra-steep subthreshold swing and high drivability without hysteresis.