High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array
- Resource Type
- Conference
- Authors
- Song, M. Y.; Lee, C. M.; Yang, S. Y.; Chen, G. L.; Chen, K. M.; Wang, I J.; Hsin, Y. C.; Chang, K. T.; Hsu, C. F.; Li, S. H.; Wei, J. H.; Lee, T. Y.; Chang, M. F.; Bao, X. Y.; Diaz, C. H.; Lin, S. J.
- Source
- 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :377-378 Jun, 2022
- Subject
- Components, Circuits, Devices and Systems
Annealing
X-ray scattering
Switches
Voltage
Very large scale integration
Conductivity
Circuit stability
Spin-orbit torque
SOT-MRAM
endurance
SOT channel materials
- Language
- ISSN
- 2158-9682
We demonstrated an 8Kb SOT-MRAM array which achieves the highest field-free switching speed (1ns) never reported. The low transistor switching voltage (V SW ) 1.5V at switching current density (J SW ) 68MA/cm 2 is attributed to the unique tungsten-based cSOT channel material (SCM) which provides high spin-Hall angle (~0.6) and low resistivity (160μΩ-cm) with 400℃ thermal budget. The 8Kb SOT-MRAM array also showed good read window and array yield thanks to the promising MTJ etching process. Excellent performances such as high retention ( >>10 years at RT) and high endurance 7e12 cycles are demonstrated as well.