300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3 Gate Insulator
- Resource Type
- Conference
- Authors
- Fu, Yu; Chang, Yuhao; Zhu, Xiaohua; Hiraiwa, Atsushi; Xu, Ruimin; Xu, Yuehang; Kawarada, Hiroshi
- Source
- 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :121-124 May, 2022
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Silicon compounds
MOSFET
Logic gates
Insulators
Diamond
Threshold voltage
Transistors
Silicon
MOSFETs
Normally-off
- Language
- ISSN
- 1946-0201
In this study, high-performance normally–off oxidized Si-terminated (C–Si) diamond metal–oxide– semiconductor field–effect transistors (MOSFETs) have been achieved using (111) diamond and Al 2 O 3 gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p ++ )-diamond MOSFETs utilizing a SiO 2 mask, carbon–silicon bonding was established at SiO 2 /diamond interface. C–Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.