Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block
- Resource Type
- Conference
- Authors
- Kitamura, Yudai; Yano, Hiroshi; Iwamuro, Noriyuki; Kato, Fumiki; Tanaka, So; Tawara, Takeshi; Harada, Shinsuke; Sato, Hiroshi
- Source
- 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :109-112 May, 2022
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Electrodes
MOSFET
Semiconductor device measurement
Temperature
Silicon carbide
Switches
Logic gates
SiC MOSFETs
SWITCH-MOS
Internal diodes
Surge current capability
Heat capacitance block
TCAD simulation
- Language
- ISSN
- 1946-0201
This study investigated the surge current capabilities of Schottky barrier diodes (SBDs) embedded in a 1.2 kV SiC SBD-integrated trench MOSFET (SWITCH-MOS). The SBD embedded in the SWITCH-MOS with a Cu block attached to the surface showed a superior surge current capability to a standard SWITCH-MOS, and equivalent to that of a conventional SiC trench MOSFET (IE-UMOSFET). This is because the Cu block attached to the surface suppresses the increase in the temperature of the device surface during high current conduction in the SBD and prevents short-circuits between the gate and source induced when the Al electrode melts. Hence, it was found that a SWITCH-MOS with a Cu block achieves the same surge current capability as an IE-UMOSFET.