Lifetime Control Free Cathode Side Concept for Si-Based Power Diode Targeting High-Speed Operation and High Dynamic Ruggedness
- Resource Type
- Conference
- Authors
- Nakamura, Katsumi; Tanaka, Koji; Takeda, Naoyuki; Suzuki, Mikihito; Kawase, Yusuke
- Source
- 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :269-272 May, 2022
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Performance evaluation
Crystals
Silicon
Robustness
Semiconductor diodes
Leakage currents
Voltage control
Power diode
RFC diode
thin wafer process
crystal defect
lifetime control
high-speed operation
dynamic ruggedness
- Language
- ISSN
- 1946-0201
We present the first advanced power diode technology that matches the diameter of a large Si wafer (≥200mm). Our proposed diode consists of a new cathode with a thin wafer process-induced crystal defect layer and a double-implanted layer in combination with a relaxed field of cathode technology. The new diode demonstrates high-speed operation, a low cross-point current, a low junction leakage current, and improved dynamic robustness without a lifetime control technique. The thermal stability of the proposed cathode concept is equal to that of a defect free power diode. The proposed cathode concept further evolves the RFC diode technology.