Anti-solvent treatment of all Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light Emitting Diodes
- Resource Type
- Conference
- Authors
- Saeed, Fawad; Hussain, Sajid; Raza, Ahmad; Perveen, Abida; Asghar, Ali; Din, Nasrud; Khan, Qasim; Lei, Wei
- Source
- 2022 5th International Conference on Circuits, Systems and Simulation (ICCSS) Circuits, Systems and Simulation (ICCSS), 2022 5th International Conference on. :39-44 May, 2022
- Subject
- Components, Circuits, Devices and Systems
Resistance
Solvents
Quantum dots
Surface morphology
Voltage
Tin
Light emitting diodes
Inverted light emitting diodes
CsPbBr3 quantum dots
solvent treatment
charge carrier balance
Zinc tin oxide
- Language
Owing to superb photophysical properties and utilization in quantum dot light-emitting diodes (QLEDs), perovskite-based cesium lead bromide (CsPbBr3) quantum dots have gained significant research attention. Solvent engineering can improve the QDs film and thus increase the efficiency of PeLED. The QDs film was post-treated with solvent to enhance surface morphology and photoluminance while simultaneously passivating surface structure and minimizing exciton quenching. Using IPA as a solvent treatment lowered the device turn-on voltage VT (1 cd m -2 ) from 2.6 V to 2.2 V. Moreover, Invert structure devices showed 2557 cd m -2 luminance and 10.7 cd A -1 current efficiency. These findings suggest that PeLED QDs-based devices can be used to design next-generation lighting and displays.