An Ultra-wideband Low Noise Amplifier Design in 0.13-um CMOS Technology
- Resource Type
- Conference
- Authors
- Pang, Dongwei; Gui, Yongfeng; Wu, Shiwei; Wang, Xiaohu; Gang, Wang
- Source
- 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Integrated Circuits, Technologies and Applications (ICTA), 2021 IEEE International Conference on. :43-44 Nov, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Robotics and Control Systems
Resistors
Radio frequency
Low-noise amplifiers
Noise figure
Bandwidth
CMOS technology
Transformers
LNA
shunt resistor feedback
transformer matching
- Language
This paper presents an ultra-wideband low noise amplifier (LNA) fabricated in 130-nm CMOS technology. A shunt resistor feedback topology combined with transformer matching is proposed and used to broaden the bandwidth. The measured results show that this single-stage LNA has an operation band ranging from 6.5 GHz to 13.5 GHz in terms of the 3-dB drop in gain, which defines a relative bandwidth of 70%. In addition, the LNA may achieve the minimum noise figure (NF) of 3.9 dB at 9 GHz and the maximum gain of 8.7 dB at 8 GHz. The 1-dB compression point of input power is -4 dBm at 8 GHz. The area of the LNA is 0.36 mm 2 including the RF and DC pads.