Anomalous NMOSFET hot carrier degradation on DRAM
- Resource Type
- Conference
- Authors
- Shan, Faxian; Xiong, Yang; Chen, Changching; Chen, Haibo; Cho, James; Li, Xiong; Jiang, Wenyong; Huang, Jengwei
- Source
- 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Integrated Circuits, Technologies and Applications (ICTA), 2021 IEEE International Conference on. :56-57 Nov, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Robotics and Control Systems
Degradation
Human computer interaction
Integrated circuits
Hydrogen
Random access memory
Hot carriers
MOSFET circuits
hot carrier injection
HCI
subthreshold leakage
- Language
Anomalous NMOS HCI degradation has been reported on logic IC and NAND. This paper presents for the first time its occurrence on DRAM. It also shows the trade-off between DRAM retention and peripheral circuit HCI related reliability. The underlying mechanism is fully verified through systemic investigation on electrical characteristics including the subthreshold leakage increasing and recovery, DIBL worsening, and different IDS degradation behavior in linear and saturation regions. These interesting behaviors are strongly process dependent and associated with interface state generation. This work provides some ideas to minimize the anomalous degradation risk.