Optimal Design of DDR3 STT-MRAM Memory
- Resource Type
- Conference
- Authors
- Li, Yueting; Wang, Gefei; Cao, Kaihua; Leng, Qunwen; Zhao, Weisheng
- Source
- 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Torque
Power demand
Nonvolatile memory
Wearable computers
Magnetoresistive devices
Writing
Manufacturing
Controller
STT-MRAM
Storage
- Language
The spin-transfer torque magnetoresistive random access memory(STT-MRAM) has a potential business value due to its low power consumption and non-volatile. It can apply in the smart wearable device, industrial equipment, and other fields. By combining the double data rate three (DDR3) controller and STT-MRAM to make a complete storage system. We propose a method of parallel reading and writing in the storage system. By comparing the delayed data of parallel and serial read and write modes in different storage capacities. The proposed method can improve the efficiency of the system.