Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs
- Resource Type
- Conference
- Authors
- He, Jiaqi; Cheng, Wei-Chih; Jiang, Yang; Wang, Qing; Yu, Hongyu
- Source
- 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Modulation
Logic gates
Power electronics
Dielectrics
Wide band gap semiconductors
Manufacturing
Transistors
AlGaN/GaN
ultrathin-barrier
high electron mobility transistor (HEMTs)
gate dielectric
- Language
The bilayer Al 2 O 3 /in-situ SiN x gate dielectric stacks were applied to fabricate high-performance AlGaN/GaN MIS-HEMTs. Both the normally-off and normally-on operations were realized on the ultrathin-barrier Al 0.05 Ga 0.95 N/GaN heterojunctions. Moreover, the low $V_{th}$ hysteresis of 50 mV and subthreshold swing of 70 mv/dec were achieved based on the in-situ SiN x /Al 0.05 Ga 0.95 N interface. The combination of Al 2 O 3 layer and in-situ SiN x layer can also increase the output current and suppress the gate current leakage.