3D GaN Power Switching Electronics: A Revival of Interest in ELO
- Resource Type
- Conference
- Authors
- Wang, Jia; Amano, Hiroshi; Xie, Ya-Hong
- Source
- 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Performance evaluation
Three-dimensional displays
Proximity effects
Power electronics
Transistors
Gallium nitride
Anodes
GaN
power electronics
diode
ELO
- Language
We reported the first-time utilization of ELO (epitaxial lateral overgrowth) GaN (gallium nitride) for power diodes. The undesired stage of coalescence related to ELO is avoided by virtue of a novel 3D device architecture built on the ELO GaN islands on foreign substrate which features pure-lateral p-n and n + -n - junctions and electrodes lying on the opposing sidewalls of the island. Excellent electrical performance was demonstrated, revealing a strong potential of ELO GaN with 3D device architecture for power switching applications.