Improved Specific Detectivity to 107 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride
- Resource Type
- Conference
- Authors
- Ng, Doris K. T.; Zhang, Tantan; Siow, Li-Yan; Xu, Linfang; Ho, Chong-Pei; Cai, Hong; Lee, Lennon Y. T.; Zhang, Qingxin; Singh, Navab
- Source
- 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS) Micro Electro Mechanical Systems (MEMS), 2021 IEEE 34th International Conference on. :860-863 Jan, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Micromechanical devices
Temperature sensors
Detectors
Scandium
Sensors
III-V semiconductor materials
Aluminum nitride
Scandium Aluminum nitride
pyroelectric detector
CMOS-MEMS
- Language
- ISSN
- 2160-1968
CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of ~200 o C. The results show D* as high as 4.3 x 10 7 (cm√Hz)/W and NEP as low as 1.26 x 10 -9 W/√Hz. This is the first demonstration of a functional CMOS-MEMS pyroelectric detector using ScAlN as the pyroelectric sensing material. Compared to AlN that usually presents D* in the range of 10 5 -10 6 , Sc-doped AlN brings on the promise of better performing CMOS-MEMS pyroelectric detectors that could be miniaturized, integrated with CMOS circuits and provide wider applications.