Design and Fabrication of W band Heterogeneous Integrated Transceivers
- Resource Type
- Conference
- Authors
- Tao, Yu-Xiao; Yang, Xiao; Zhang, Cheng-Rui; Zhou, Liang
- Source
- 2020 IEEE MTT-S International Wireless Symposium (IWS) Wireless Symposium (IWS), 2020 IEEE MTT-S International. :1-3 Sep, 2020
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Fabrication
Gallium arsenide
Power amplifiers
Transceivers
Phase locked loops
Gallium nitride
Silicon germanium
Heterogeneous Integrated transceivers
BCB
Fabrication process
Packaged Filter
- Language
This paper presents the design and fabrication of W band 3-dimensional heterogeneous integration transceiver. Silicon-based X band Phase locked loop with a GaAs driver amplifier, W band SiGe transceiver and GaN power amplifier are integrated. A W band quintuple-mode filter are designed which can be integrated into the transceivers. The output power of the transceiver is about 22dBm at 94GHz.