Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoOxpassivating contacts solar cells
- Resource Type
- Conference
- Authors
- Mazzarella, Luana; Alcaniz-Moya, Alba; Kawa, Eliora; Procel, Paul; Zhao, Yifeng; Han, Can; Yang, Guangtao; Zeman, Miro; Isabella, Olindo
- Source
- 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2020 47th IEEE. :0405-0407 Jun, 2020
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Photovoltaic cells
Silicon
Indium tin oxide
Thermal stability
Plasmas
Heterojunctions
Stability analysis
(i)a-Si:H/MoOx solar cells
Dipole layer
Enhanced stability
- Language
Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoO x stack results in strongly improved electrical parameters as compared to the one featuring only MoO x and to the silicon heterojunction reference cell. Optical simulations and experimentally measured currents suggest that the additional PT is responsible of very limited parasitic absorption overcompensated by the thinner MoO x used (3.5 nm) and by the lower losses in the (i)a-Si:H layer underneath.