Work function of indium oxide thin films on p-type hydrogenated amorphous silicon
- Resource Type
- Conference
- Authors
- Semma, Masanori; Gotoh, Kazuhiro; Kurokawa, Yasuyoshi; Usami, Noritaka
- Source
- 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2020 47th IEEE. :0124-0127 Jun, 2020
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Indium tin oxide
Annealing
Substrates
Photovoltaic cells
Glass
Heterojunctions
Sputtering
indium tin oxide
hydrogen doped indium oxide
work function
hydrogenated amorphous silicon
heterojunction
- Language
We investigate an influence of thermal treatment on the properties of tin-doped indium oxide (ITO) and In 2 O 3 on glass and hydrogenated amorphous silicon (a-Si:H)/glass. Work function (WF), electron density and mobility of the In 2 O 3 are dependent on a-Si:H underlayer possibly due to H diffusion from a-Si:H underlayer by annealing. In addition, WF of the In 2 O 3 is higher than that of the ITO regardless of presence of a-Si:H underlayer. Furthermore, the ITO/In 2 O 3 double layers are fabricated for silicon heterojunction (SHJ) solar cells. The electrical and optical properties of the ITO/In 2 O 3 stacks are adequate for transparent conductive oxide (TCO) layer.