Unijunction Transistor on Silicon-On-Insulator Substrate
- Resource Type
- Conference
- Authors
- Chen, YX.; Liu, J.; Xiao, K.; Zaslavsky, A.; Cristoloveanu, S.; Liu, FY.; Li, B.; Wan, J.
- Source
- 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT, 2020 IEEE 15th International Conference on. :1-3 Nov, 2020
- Subject
- Components, Circuits, Devices and Systems
Substrates
Silicon
Junctions
Hysteresis
Electric potential
Switches
Voltage control
- Language
A unijunction transistor based on fully-depleted silicon-on-insulator substrate is proposed. The device structure is similar to a junction field effect transistor. By conducting the TCAD simulation, we observe sharp switching and large hysteresis in emitter current-emitter voltage curves with the turn-on voltage linearly controlled by the second base voltage. The operation of the device is mainly determined by the emitter-channel PN junction, which is induced by the backgate voltage. The impact of the backgate voltage on the electrical characteristics is analyzed by changes in the channel potential.