GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing
- Resource Type
- Conference
- Authors
- Cao, Zhongming; Ashwin, Mark; Veal, Tim; Sandall, Ian
- Source
- 2020 IEEE Photonics Conference (IPC) Photonics Conference (IPC), 2020 IEEE. :1-2 Sep, 2020
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Electrodes
Photoconductivity
Photodetectors
Physics
Bismuth
Performance evaluation
GaSbBi
MSM-PDs
bismuth
- Language
- ISSN
- 2575-274X
We demonstrate the operation of GaSbBi metal-semiconductor-metal photodetectors with different Bi concentration and compare performance with a reference GaSb device. A GaSbBi MSM-PDs is shown to have a 220 nm wavelength extension in cut-off wavelength, with 2.9% bismuth concentration, compared to the reference device. We also investigate the influences of electrode geometry and size on the final device performance.