1.5-2.5 GHz Measurement Based Power Amplifier Using SSPL GaN HEMT Device
- Resource Type
- Conference
- Authors
- Jindal, Ashish; Goyal, Umakant; Rawat, Karun; Basu, Ananjan; Mishra, Meena; Koul, S.K.
- Source
- 2019 IEEE MTT-S International Microwave and RF Conference (IMARC) MTT-S International Microwave and RF Conference (IMARC), 2019 IEEE. :1-4 Dec, 2019
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Signal Processing and Analysis
power amplifier
Load Pull
MIC
GaN HEMT
bias tee
- Language
- ISSN
- 2377-9152
In this paper, a two stages broadband power amplifier with improved interstage matching has been designed and developed using SSPL GaN HEMT Device. In this work, the power amplifier has been designed using measured data. Technique to measure packaged power devices using indigenously developed bias tee incorporating stability network along with DC bias network has been discussed. Also, improved interstage matching network to improve bandwidth of power amplifier. Designed power amplifier is providing optimized performance in 1GHz bandwidth with 24dB small signal gain and 4W CW output power with 40% PAE.