High Gain Optical Sensors Enabled by Subthreshold Operation of Photodiode-Gated Transistors
- Resource Type
- Conference
- Authors
- Wang, Kai; Liu, Jinming; Hu, Yunfeng; Xu, Yangbing; Qi, Yihong; Xu, Yitong; Zhou, Xianda
- Source
- 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2020 4th IEEE. :1-4 Apr, 2020
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Power, Energy and Industry Applications
Sensitivity
Imaging
Threshold voltage
Impact ionization
Manufacturing
Optical sensors
Transistors
High Gain
Photodiode-Gated Transistors
Active Pixel Sensor
Subthreshold Operation
- Language
In optical sensors, it is desirable to have high gain leading to high sensitivity and high signal to noise ratio (SNR). Conventionally, the most popular approaches are avalanche photomultiplication initiated by impact ionization in an avalanche photodiode and active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor. This paper summarizes our recent work in high gain integrated optical sensors enabled by subthreshold operation of photodiode-gated transistors.