Fabrication and Characterization of SOI Based Interposer with Air Gapped Si-TSV for 2.5D Integration
- Resource Type
- Conference
- Authors
- Li, Nannan; Ran, Honglei; Xing, Chaoyang; Sun, Peng; Zhu, Zhengqiang
- Source
- 2019 20th International Conference on Electronic Packaging Technology(ICEPT) Electronic Packaging Technology(ICEPT), 2019 20th International Conference on. :1-4 Aug, 2019
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
SOI based
interposer
TSV
2.5D
- Language
A low stress SOI(Silicon on Insulator) based interposer with air gapped Si-TSV(Through Silicon Via) is presented for 2.5D/3D (Three Dimensional) integration of MEMS inertial sensors and the integrated circuits (ICs) dies. The air gapped Si-TSV composes of a Si pillar and the air isolation trench. The Si pillar is insulated by the air isolation trench. The mechanical analysis results illustrate that the Von Mises stress is no more than 10MPa and far from the MEMS inertial sensor. The air gapped Si-TSV is able to provide free standing pads for stacking dies and therefore is helpful for removing stress accumulation close to stacking dies. The insertion loss is measured about -1.94dB at 300MHz for the presented TSV channel. The proposed Si interposer with airgapped Si-TSV is suitable for 3D integration of MEMS inertial sensors dies and ICs dies.