A Pinned-Photodiode (PPD) indirect Time-of-Flight (ToF) sensor and circuits have been optimized and fabricated. Tailored to improve the demodulation contrast and quantum efficiency, pixel shape modification, step implantation improvement and pixel area optimization are applied. In the simulation, the results support the expectation of better performance. The sensor and related circuits are implemented based on TCAD and EDA tools. In measurement the tested results indicate that maximum modulation frequency is 54 MHz, the quantum efficiency is 19% and the measuring range is 0.5-6.5m with these techniques.