Rapid Growth of SiO2 on SiC with Low Ditusing High Pressure Microwave Oxygen Plasma
- Resource Type
- Conference
- Authors
- Wang, Shengkai; Hao, Jilong; You, Nannan; Bai, Yun; Liu, Xinyu
- Source
- 2019 IEEE 13th International Conference on ASIC (ASICON) ASIC (ASICON), 2019 IEEE 13th International Conference on. :1-4 Oct, 2019
- Subject
- Aerospace
Bioengineering
- Language
- ISSN
- 2162-755X
High quality SiO 2 with atomic flat interface was grown on SiC rapidly at room temperature with growth rate of over 3 nm/min using high pressure (~6 kPa) microwave plasma oxidation method. Thermodynamic calculation reveals that high pressure atomic oxygen is helpful to remove the residual carbon and suppress the SiO (g) desorption and oxygen vacancy formation, and thus maintain a fast growth rate and high quality. Atomically flat interface with very low Dit (< 5 xl0 10 cm- 2 eV −1 ) comparable to SiO 2 /Si interface is demonstrated.