Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation
- Resource Type
- Conference
- Authors
- Reddy, Pramod; Breckenridge, M. Hayden; Klump, Andrew; Guo, Qiang; Mita, Seiji; Sarkar, Biplab; Kirste, Ronny; Moody, Baxter; Tweedie, James; Collazo, Ramon; Sitar, Zlatko
- Source
- 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Research and Applications of Photonics in Defense Conference (RAPID), 2019 IEEE. :1-3 Aug, 2019
- Subject
- Photonics and Electrooptics
Aluminum gallium nitride
Wide band gap semiconductors
Avalanche photodiodes
Blindness
Physics
AlGaN
APD
solar blindness
- Language
We demonstrate Al rich AlGaN based APDs grown on AlN substrates capable of high sensitivity at room temperature with ambient lighting rejection showcasing the advantage over Si and Ge based detectors. APDs are operated in linear gain region with maximum gain exceeding 1100.