A Direct-Conversion X-ray Detector Based on A Vertical X-ray Photoconductor-Gated a-IGZO TFT
- Resource Type
- Conference
- Authors
- Xu, Yangbing; Chen, Jun; Wang, Kai
- Source
- 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018 9th Inthernational Conference on. :1-1 Nov, 2018
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Thin film transistors
X-ray imaging
X-ray detectors
Photoconducting materials
Simulation
Threshold voltage
Spatial resolution
a-IGZO TFT
X-ray Photoconductor
low-dose X-ray imaging
- Language
We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=−1.42. The followed experimental results showed that the γ value can reach up to −2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.