AlN Based Dual LCAT Filters on a Single Chip for Duplexing Application
- Resource Type
- Conference
- Authors
- Zhu, Yao; Wang, Nan; LiChua, Geng; Chen, Bangtao; Srinivas, Merugu; Singh, Navab; Gu, Yuandong
- Source
- 2018 IEEE International Ultrasonics Symposium (IUS) Ultrasonics Symposium (IUS), 2018 IEEE International. :1-4 Oct, 2018
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Resonators
Aluminum nitride
III-V semiconductor materials
Silicon
filter
aluminum nitride
duplexer
coupling coefficient
- Language
- ISSN
- 1948-5727
This work presents the implementation of two 4 th order ladder type integrated filters consisting of modified laterally coupled alternating thickness (LCAT) mode resonators. These modified LCAT resonators based on aluminum nitride (AIN) thin film achieve the coupling coefficient $(k_{eff}^{2})$ ranging from 2.8% to 3.8%. The two filters operate at 2.47GHz and 2.52GHz, and achieve average insertion losses of 2.64dB and 2.3dB within 40MHz passband bandwidth, respectively. The resonators composing the two filters share the same material stack and the frequency difference is achieved by patterning the electrodes into different pitches, thus integrating these two filters on the same wafers requires 2 masks less as compared with fabricating one discrete FBAR filter whose frequency is tuned by additional layer of mass loading. Such features render this technology a competitive candidate for integrated duplexers and filters for high frequency band filtering applications.