Improving the Conductivity Limits in Si Doped Al Rich AlGaN
- Resource Type
- Conference
- Authors
- Reddy, Pramod; Guo, Qiang; Tweedie, James; Washiyama, Shun; Kaess, Felix; Mita, Seiji; Breckenridge, Mathew H.; Kirste, Ronny; Collazo, Ramon; Klump, Andrew; Sarkar, Biplab; Sitar, Zlatko
- Source
- 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID) Photonics In Defense Conference (RAPID), 2018 IEEE Research and Applications of. :1-4 Aug, 2018
- Subject
- Photonics and Electrooptics
Aluminum gallium nitride
Wide band gap semiconductors
Silicon
Doping
Conductivity
AlGaN
knee behavior
point defect control
conductivity
- Language
We report point defect control of two primary compensating defects in AlGaN: Cn and Viii+nSiAl, based on their dependence on chemical potentials. Reasonable control over the knee behavior of the conductivity and the low doping limit in Al 0.65 Ga 0.35 N thin films grown on sapphire is achieved.