Low-Noise Single Photon Avalanche Diodes in a 110nm CIS Technology
- Resource Type
- Conference
- Authors
- Moreno-Garcia, Manuel; Xu, Hesong; Gasparini, Leonardo; Perenzoni, Mattero
- Source
- 2018 48th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2018 48th European. :94-97 Sep, 2018
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
General Topics for Engineers
Power, Energy and Industry Applications
Photonics
CMOS technology
Temperature measurement
Timing
Semiconductor device measurement
Ring lasers
P-i-n diodes
single-photon
avalanche diode
SPAD
image sensors
- Language
- ISSN
- 2378-6558
The increasing performance requirements on the development of single-photon image sensors has led to a tendency towards smaller technological nodes which allow to get higher levels of integration. This makes necessary the successful implementation of Single Photon Avalanches Diodes (SPAD) on deep sub-micron processes. This work presents the design and characterization of SPADs fabricated in a 110nm CMOS Image Sensor technology. These devices are characterized by a remarkably low dark count rate varying linearly with the SPAD active area, with median values per unit area as low as 0.06 to $\pmb{1.15\mathrm{Hz}/\mu \mathrm{m}}^{2}$: when they are biased 1 to 6V above their breakdown voltage, respectively. A Photon Detection Efficiency larger than 50% (at 455nm) has been obtained biasing the device 6V over the breakdown voltage. The timing resolution does not exhibit any diffusion tail, and the FWHM values that have been measured at 4V excess bias are 86.5 (468-nm laser) and 69ps (831-nm laser).