27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control
- Resource Type
- Conference
- Authors
- Nakayama, Koji; Mizushima, Tomonori; Takenaka, Kensuke; Koyama, Akihiro; Kiuchi, Yuji; Matsunaga, Shinichiro; Fujisawa, Hiroyuki; Hatakeyama, Tetsuo; Takei, Manabu; Yonezawa, Yoshiyuki; Kimoto, Tsunenobu; Okumura, Hajime
- Source
- 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018 IEEE 30th International Symposium on. :395-398 May, 2018
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
SiC
Ultra High Voltage
PiN Diode
space-modulated JTE
Carrier Lifetime Control
Carrier Injection Control
- Language
- ISSN
- 1946-0201
Ultra-high-voltage 4H-SiC PiN diode with a space-modulated junction termination extension and carrier injection control has been investigated. The introduction of a space-modulated region results in a high breakdown voltage of 27.5 kV, that is the highest among the values reported for 20 A class 4H-SiC PiN diodes. The simulated and measured forward characteristics of the 4H-SiC PiN diode with the carrier injection control are also reported. Forward voltage and on-resistance decrease as carrier lifetime increases. The introduction of carrier injection control at the anode and cathode sides results in reduction in carrier concentration. The measured characteristics exhibit good correlation with simulated results. Based on these results, we can confirm the effect of carrier lifetime on electrical characteristics.