Self terminating lateral-vertical hybrid super-junction FET that breaks RDS.A — Charge balance trade-off window
- Resource Type
- Conference
- Authors
- Padmanabhan, Karthik; Guan, Lingpeng; Bobde, Madhur; Lui, Sik; Bhalla, Anup; Yilmaz, Hamza; Zhang, Lei
- Source
- 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018 IEEE 30th International Symposium on. :152-155 May, 2018
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
MOSFET
Junctions
Substrates
Electric breakdown
Power semiconductor devices
Integrated circuits
Implants
Superjunction
Charge Balance
High Voltage
Avalanche
Breakdown
Lateral
Vertical
LDMOS
Rds.A
Trench Power MOSFETs
Scalability
Cascode
Termination
- Language
- ISSN
- 1946-0201
In this paper, we present a novel lateral/vertical hybrid super-junction structure that breaks the fundamental trade-off between the Rds.A and Charge imbalance window for a Super-Junction MOSFET. This device structure can continue the scaling of Superjunction MOSFET well below 10mΩ.cm 2 with good manufacturability window. Methods of scaling the Blocking Voltage and R ds.A are also discussed for this hybrid device structure. This device structure also offers an optional drain electrode on the top surface, if needed for co-packaging with other chips.