Impact of Ga/III Profile on Voltage-dependent Collection Losses in CIGS Solar Cells
- Resource Type
- Conference
- Authors
- Poplavskyy, Dmitry; Bailey, Jeff; Farshchi, Rouin; Spaulding, David
- Source
- 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2017 IEEE 44th. :1686-1690 Jun, 2017
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Photovoltaic cells
Temperature measurement
Photonic band gap
Performance evaluation
Junctions
Resistance
Integrated circuit interconnections
photovoltaic cells
thin film devices
- Language
The impact of Ga/III profile changes at the front (junction) side and the back side of the device on FF and Voc loss from voltage-dependent collection was studied. Ga/III changes in the back of the device have a minimal impact on voltage-dependent collection, mostly affecting dark diode recombination. In contrast, Ga/III changes at the front side of the absorber could lead to strong FF collection losses when the Ga/III gradient creates an opposing effective force field that reduces field strength in the space-charge region. The magnitude of this loss is modulated by the defect recombination strength, as demonstrated by 1D device simulations.