Simulation of drive-level capacitance profiling to interpret measurements on Cu(In, Ga)Se2Schottky devices
- Resource Type
- Conference
- Authors
- Zapalac, Geordie; Bailey, Jeff
- Source
- 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2017 IEEE 44th. :3327-3332 Jun, 2017
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Capacitance
Mathematical model
Schottky barriers
Voltage measurement
Semiconductor process modeling
Schottky diodes
Doping profiles
CIGS
DLCP
simulation
Schottky barrier
doping profile
deep defects
- Language
A simulation is presented for drive-level capacitance profiling (DLCP) of Schottky diodes that allows a continuous distribution of defect states in both energy and depth. The simulation is used to interpret high frequency DLCP data for a Cu(In, Ga)Se2 Schottky device.