Effect of Deposited Pressure on the CdTe Thin Films by Closed Space Sublimation Method
- Resource Type
- Conference
- Authors
- Zhang, Yufeng; Du, Zhongming; Liu, Xiangxin
- Source
- 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2017 IEEE 44th. :1707-1710 Jun, 2017
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Three-dimensional displays
Solids
Crystal growth
charge carrier concentration
current rectification
conductivity
Cu2O
heterojunction
Si
- Language
A home-made CSS system in which the CdTe source was above the substrate was used to deposit CdTe thin film. The pressure (3.7~260 Pa) was controlled by nitrogen. The experimental results showed that the deposited rate increased with the decreasing pressure. As the pressure decreased, the center of the film was thicker than that in the edge. Accordingly, the micromorphology obtained by SEM showed that the crystal grain size became larger while the orientation was more random with the decreasing deposition pressure analyzed by XRD. The N on-stoichimometric composition shift of CdTe thin films was characterized by EDX and the Cd/ Te atomic ratio was 0.87 ± 0.04, 0.88 ± 0.08 and 0.93 ± 0.13 as the increasing pressure in our experiments. The calculated results showed that Te-5p orbitals of CdTe with Cd vacancy increased comparing with the bulk CdTe at G-point.