High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC
- Resource Type
- Periodical
- Authors
- Sangwan, V.; Kapoor, D.; Tan, C.M.; Lin, C.H.; Chiu, H.
- Source
- IEEE Transactions on Electromagnetic Compatibility IEEE Trans. Electromagn. Compat. Electromagnetic Compatibility, IEEE Transactions on. 61(2):564-571 Apr, 2019
- Subject
- Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Integrated circuit modeling
Solid modeling
Layout
Transistors
Semiconductor device modeling
Computational modeling
Electromagnetic compatibility/electromagnetic emission (EMC/EME)
gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier
response surface methodology (RSM)
- Language
- ISSN
- 0018-9375
1558-187X
Rapid increase in operating frequencies and power density necessitate the importance of examining electromagnetic compatibility/electromagnetic emissions (EMEs) from high-frequency and high-power integrated circuits (ICs). In this paper, a simulation method is demonstrated to study the EME using gallium nitride high electron mobility transistor power amplifier IC chip as a device under test. Simulation model is developed by collaborating a high-frequency structure simulator with a Keysight Advance Design System for simulation of three-dimensional layout of IC. The simulated EME results are verified with experimental measurement results; the hotspots obtained with higher EME as identified by a near-field scanner and simulation results are identical. With this simulation method, optimization is done using a response surface methodology to reduce the EME for the IC chip. It is found that small changes in the IC layout can make a significant difference in the EME. Simulation model developed with RSM optimization technique opens a gateway for the IC industry to investigate EME of their chip design without going through a costly and time-consuming process of fabrication for testing its EME.