An accurate electro-thermal model of SiC power mosfets for fast simulations
- Resource Type
- Conference
- Authors
- Lena, Davide; Buraioli, Irene; Bocca, Alberto; Demarchi, Danilo; Macii, Alberto
- Source
- 2018 IEEE International Conference on Industrial Technology (ICIT) Industrial Technology (ICIT), 2018 IEEE International Conference on. :623-628 Feb, 2018
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Silicon carbide
Semiconductor device modeling
Mathematical model
Solid modeling
MOSFET
Numerical models
Integrated circuit modeling
SiC modeling
wide bandgap device
discrete power device
CAD methodologies
third quadrant characteristics
- Language
A methodology for developing an electro-thermal model for silicon carbide (SiC) power transistors, is presented. The primary target of a such methodology is to address a detailed system level mixed signal multi-domain simulation, where simulation time and accuracy are the key factors. The adopted methodology aims to provide a compact model usable in a high-level behavioral description of any SiC-based power system. The modeling of an existing SiC MOSFET produced by STM is then described as an application. A preliminary simulation was carried out to compare the results to real device characteristics. A scenario of an inverter circuit based on SiC power transistors is also provided. Using the proposed macromodel, the final results show a reduction in simulation time of the inverter by a factor of 40 with respect to the original PSpice simulation time.