Simulation and analysis of magnetic field strength with magneto-resistive sensor: A future application
- Resource Type
- Conference
- Authors
- Ramteke, Sangharatna; Chelladurai, H; Pandian, K. K. Soundra
- Source
- 2017 IEEE 3rd International Conference on Engineering Technologies and Social Sciences (ICETSS) Engineering Technologies and Social Sciences (ICETSS), 2017 IEEE 3rd International Conference on. :1-5 Aug, 2017
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Geoscience
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Magnetic domains
Perpendicular magnetic anisotropy
Magnetic separation
Magnetic analysis
Magnetic circuits
Magnetic hysteresis
- Language
The optimum orientation of four bar magnets to give an effective magnetic field strength with magneto-resistive (MR) sensor is proposed in this paper. The bar magnets having the same magnetic field strength of 4.51 kA/m are used and placed at a nominal distance from the MR sensor to get the maximum magnetic field strength and sensor voltage. The magnetic orientation and it's field strength is simulated and analyzed through Comsol Software and validated with the laboratory experimental results. The experimental result shows that the SSNN orientation at a distance of 0.5 cm from MR sensor comparatively gives higher magnetic field strength and sensor output voltage.