Study and suppression of ambipolar effect in multilayer phosphorene tunnel field effect transistors using double gate structure
- Resource Type
- Conference
- Authors
- Aadit, Muhammad Navid Anjum; Juthi, Shamima Nasrin; Kirtania, Sharadindu Gopal
- Source
- 2017 3rd International Conference on Electrical Information and Communication Technology (EICT) Electrical Information and Communication Technology (EICT), 2017 3rd International Conference on. :1-6 Dec, 2017
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Logic gates
TFETs
Nonhomogeneous media
Tunneling
Photonic band gap
Two dimensional displays
Ambipolar
Double gate
Multilayer
Phosphorene
TFET
- Language
We present a comprehensive study of ambipolar effect in multilayer phosphorene tunnel field-effect transistors (TFETs). Phosphorene is a promising 2D material with tunable bandgap and high mobility but ambipolarity limits many of its potential applications. We explain the ambipolar effect with energy band diagram which results in undesirable off state drain current. This work uses an in-house built simulator and suggests a technique to suppress the ambipolar current by using different gate oxide materials. However, this method has a trade-off that it reduces on-current too. Therefore, in this paper, we present a novel double gate structure of multilayer phosphorene TFETs which not only minimizes the off-current but also sustains the on-current at its desired level. The proposed design is very efficient in suppressing ambipolarity up to a certain number of layers. The simulated results are presented in tabular form which would be helpful for any further study on ambipolarity of phosphorene TFETs. The proposition can be extended to other 2D material TFETs too where ambipolarity limits device performance.