Surface effect on the current-voltage characteristics of back-gated MoS2 channel MOSFET
- Resource Type
- Conference
- Authors
- He, Mingyue; Bu, Sitong; Huang, Daming
- Source
- 2017 IEEE 12th International Conference on ASIC (ASICON) ASIC (ASICON), 2017 IEEE 12th International Conference on. :592-595 Oct, 2017
- Subject
- Components, Circuits, Devices and Systems
Adsorption
MOSFET
Molybdenum
Sulfur
Semiconductor device modeling
Logic gates
Water
- Language
The surface effect on the IV characteristics of back-gated MOSFETs is of great importance since it directly links to the sensitivity of a sensor. It is also important to the instability of any back-gated devices with top surface exposed to the air. In this presentation, we propose an analytical model to describe the surface effect, i.e., the effect of surface adsorption by molecules on the potential of a long channel back-gated MOSFET. The model is used to calculate the drain current and its change induced by surface adsorption at different bias. A detailed calculation is made on back-gated multilayer MoS 2 channel MOSFETs with different channel thicknesses and device bias. The results are compared with TCAD simulations and a quantitative agreement is demonstrated.