4H-SiC power DMOSFETs with breakdown voltage higher than 8.0 kV has been successfully fabricated by using an 60μm-thick, 1.0×10 15 cm −3 doped drift epilayer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC DMOSFETs were reported. A peak effective channel mobility of 20 cm 2 /Vs was extracted from a test MOSFET. A specific on-resistance of 80 mΩ-cm 2 were measured with at a V GS of 20V, a 32% reduction in R on sp , compared to a previously reported value. A leakage current of 12 μΑ was measured at a drain bias of 8.0 kV from a 4H-SiC DMOSFE with an active area of 1.0×10 −2 cm 2 . In this report, four new termination structures (T1-T3) were implemented in test PiN diodes and tested, for a reduction of termination length.