Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
- Resource Type
- Conference
- Authors
- Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Turowski, Marek; Ferlet-Cavrois, Veronique; Bosser, Alexandre; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.; Virtanen, A.
- Source
- 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on. :1-4 Sep, 2016
- Subject
- Components, Circuits, Devices and Systems
Ions
Silicon carbide
Schottky diodes
Degradation
Radiation effects
Leakage currents
Xenon
Current-voltage characteristics
Ion radiation effects
Modeling
Power semiconductor devices
- Language
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.