Ge/SiGe quantum-well micro-bridges with high tensile strain
- Resource Type
- Conference
- Authors
- Xue, Muyu; Chen, Xiaochi; Chen, Junyan; Kao, Ming-Yen; Shang, Colleen; Zang, Kai; Huo, Yijie; Lu, Ching-Ying; Chen, Yusi; Deng, Huiyang; Kamins, Theodore I.; Harris, James S.
- Source
- 2017 Conference on Lasers and Electro-Optics (CLEO) Lasers and Electro-Optics (CLEO), 2017 Conference on. :1-2 May, 2017
- Subject
- Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Bridges
Quantum well devices
Tensile strain
Germanium
Buffer layers
Strain measurement
- Language
Highly tensile-strained Ge/SiGe MQW structures on Si substrates are formed by introducing micro-bridge structures. Lattice matching and strain of epitaxial structures are analyzed by XRD. Large strain induced by micro-bridges is confirmed with Raman spectroscopy.