Heavily-doped germanium on silicon with activated doping exceeding 1020 cm−3 as an alternative to gold for mid-infrared plasmonics
- Resource Type
- Conference
- Authors
- Frigerio, Jacopo; Ballabio, Andrea; Pellegrini, G.; Gallacher, Kevin; Giliberti, Valeria; Baldassarre, Leonetta; Milazzo, Ruggero; Huet, Karim; Mazzamuto, Fulvio; Biagioni, Paolo; Paul, Douglas J.; Ortolani, Michele; Napolitani, Enrico; Isella, Giovanni
- Source
- 2017 IEEE 14th International Conference on Group IV Photonics (GFP) Group IV Photonics (GFP), 2017 IEEE 14th International Conference on. :9-10 Aug, 2017
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Doping
Plasmons
Gold
Silicon
Sensors
Standards
- Language
- ISSN
- 1949-209X
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >10 20 cm −3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.