Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation
- Resource Type
- Conference
- Authors
- Russell, Stephen A. O.; Jennings, Michael R.; Dai, Tianxiang; Li, Fan; Hamilton, Dean P.; Fisher, Craig A.; Sharma, Yogesh K.; Mawby, Philip A.; Perez-Tomas, Amador
- Source
- 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Silicon Carbide & Related Materials (ECSCRM), European Conference on. :1-1 Sep, 2016
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Aluminum oxide
Silicon carbide
High K dielectric materials
Dielectrics
MOSFET
Buffer layers
Fans
4H-SiC MOSCAP
Al2O3
High-k
Perovskite
X-Ray Diffraction
- Language
Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO 3 ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO 3 on SiC, ABO 3 on SiC with a SiO 2 buffer (10 nm and 40 nm) and ABO 3 on SiC with an Al 2 O 3 buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al 2 O 3 buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ∼ 0.2 μF/cm 2 in the accumulation region indicating a dielectric constant of ∼120.