Design and fabrication of 1.2kV 4H-SiC DMOSFET
- Resource Type
- Conference
- Authors
- Huang, Runhua; Tao, Yonghong; Bai, Song; Chen, Gang; Wang, Ling; Li, Rui; Li, Yun; Zhao, Zhifei
- Source
- 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Wide Bandgap Semiconductors China (SSLChina: IFWS), 2016 13th China International Forum on Solid State Lighting: International Forum on. :16-18 Nov, 2016
- Subject
- Components, Circuits, Devices and Systems
MOSFET
JFETs
Silicon carbide
Doping
Fabrication
Silicon
Implants
- Language
A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 6×10 15 cm −3 . The devices were fabricated with a floating guard ring edge termination. The drain current Id = 10 A at Vg = 20 V, corresponding to Vd = 2.0 V.