Tensile-strained Ge/SiGe quantum-well microdisks with overlying SiNx stressors
- Resource Type
- Conference
- Authors
- Kao, Ming-Yen; Chen, Xiaochi; Huo, Yijie; Shang, Colleen; Xue, Muyu; Zang, Kai; Lu, Ching-Ying; Fei, Edward T.; Chen, Yusi; Kamins, Theodore I.; Harris, James S.
- Source
- 2016 Conference on Lasers and Electro-Optics (CLEO) Lasers and Electro-Optics (CLEO), 2016 Conference on. :1-2 Jun, 2016
- Subject
- General Topics for Engineers
Photonics and Electrooptics
Electrical engineering
- Language
We demonstrate Ge/SiGe multiple-quantum-well microdisks on Si substrates with SiN x stressors on top. The strain transferred from the SiN x to the Ge quantum wells are determined by photoluminescence and Raman measurements, and are in agreement with simulation results.