Demonstration of a sub-0.03 um2 high density 6-T SRAM with scaled bulk FinFETs for mobile SOC applications beyond 10nm node
- Resource Type
- Conference
- Source
- 2016 IEEE Symposium on VLSI Technology VLSI Technology, 2016 IEEE Symposium on. :1-2 Jun, 2016
- Subject
Computing and Processing Power, Energy and Industry Applications Robotics and Control Systems Transportation Logic gates Resistance FinFETs Optimization SRAM cells Very large scale integration - Language
- ISSN
- 2158-9682