A very wideband FET resistive MMIC double balanced mixer based on empirical non-linear cold FET model
- Resource Type
- Conference
- Authors
- Raj, Manu; Chaturvedi, Sandeep; Sazid, Mohd.; Badnikar, S.L.; Sehgal, B.K.
- Source
- 2015 IEEE MTT-S International Microwave and RF Conference (IMaRC) International Microwave and RF Conference (IMaRC), 2015 IEEE MTT-S. :305-308 Dec, 2015
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineering Profession
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Mixers
Impedance matching
Field effect transistors
Radio frequency
Solid modeling
Logic gates
MMICs
FET resistive mixer
model
MESFET
balun
nonlinear
MMIC
double balance
- Language
- ISSN
- 2377-9152
A broadband FET resistive mixer MMIC on GaAs substrate is described in this paper. A non-linear model of MESFET operating in passive mode (Vds=0V) developed for design and simulation of mixer has also been analyzed. Measured mixer results match closely with the simulations based on the developed model. The on-chip broadband spiral baluns delivered wide frequency range from 230 MHz to 1.8 GHz while the LO/RF frequency coverage was from 2–8 GHz. 10 dB conversion loss was achieved for 500 MHz IF at 5 GHz RF frequency, and 10 dBm LO power. The mixer exhibited >10 dBm input 1dB compression point, 18 dBm input 3rd order intercept point and >30 dB LO-IF and RF-IF isolation. The mixer was realized in compact chip area of 2.8 × 2.6 mm2 through intensive EM simulations using ADS momentum EM simulator and was fabricated using the standard G7A MESFET process at GAETEC.