A dual-band CMOS power amplifier at 1.8 GHz and 2.6 GHz for LTE applications
- Resource Type
- Conference
- Authors
- Pan, Guan-Yu; Yang, Jeng-Rern
- Source
- 2015 International Symposium on Next-Generation Electronics (ISNE) Next-Generation Electronics (ISNE), 2015 International Symposium on. :1-3 May, 2015
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Power amplifiers
CMOS integrated circuits
Dual band
CMOS technology
Gain
Power generation
Long Term Evolution
dual-band
LTE
CMOS
power amplifier
feedback
diode linearizer
- Language
- ISSN
- 2378-8593
2378-8607
This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to enhance linearity. The simulation results indicated that the PA exhibited an average power gain of 21 dB, an input return loss (S 11 ) less than −18 dB, the output power is about 24.8/23 dBm, and power added efficiency (PAE) is about 35/33 % at 1.8/2.6 GHz. The power consumption is 211 mW at an operation voltage of 3.3V.