A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness
- Resource Type
- Conference
- Authors
- Guan, Lingpeng; Bobde, Madhur; Padmanabhan, Karthik; Yilmaz, Hamza; Bhalla, Anup; Zhang, Lei; Chiu, Allan; Kim, Jongoh; Li, Wenjun
- Source
- 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on. :401-404 May, 2015
- Subject
- Power, Energy and Industry Applications
MOSFET
Switches
Electromagnetic interference
Logic gates
Electrodes
Power semiconductor devices
Integrated circuits
Superjunction
Trench
UIS
High Voltage
Efficiency
- Language
- ISSN
- 1063-6854
1946-0201
In this paper, a novel trench shielded 600V MOSFET with buried field ring is proposed and demonstrated. The proposed structure achieves an active area die shrink of 35-55% compared to a conventional 600V planar MOSFET. Furthermore, it almost doubles the Unclamped Inductive Switching (UIS) rated current and improves 0.3% of the efficiency compared to the Superjunction device. It also shows better diode reverse recovery performance than Superjunction device.