In this paper, a novel embedded voltage clamping structure is proposed for an IGBT module. Firstly, the negative effect of loop inductances in the voltage clamping circuit is analyzed. And then, a novel embedded structure is proposed to minimize the parasitic inductances in the voltage clamping loop. Finally, an experiment is carried out on an IGBT module. With the proposed embedded structure, the IGBT voltage spike is maximally limited at the turn-off transient, which keeps the device operating in a much safer region.