A fully integrated CMOS broad band power amplifier using a low-Q matching strategy
- Resource Type
- Conference
- Authors
- Bhattacharya, Ritabrata; Gupta, Robin; Basu, Ananjan; Rawat, Karun; Koul, Shiban.K.
- Source
- 2014 Asia-Pacific Microwave Conference Microwave Conference (APMC), 2014 Asia-Pacific. :747-749 Nov, 2014
- Subject
- Components, Circuits, Devices and Systems
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
CMOS integrated circuits
Power amplifiers
CMOS technology
Decision support systems
Optical transmitters
Microwave amplifiers
CMOS
Power amplifier
broadband
low Q
single section matching
- Language
- ISSN
- 2165-4727
2165-4743
A fully integrated CMOS broadband power amplifier in 0.18µm technology is presented using a unique combination of a cascode output stage, low-Q single section L-match networks and inter-stage degeneration. Matching sections are implemented with bias feed inductors and dc blocking capacitors to minimize the active chip area to 0.55 mm 2 . The proposed design, achieves a fractional bandwidth of 82 % in bare die measurements, where maximum power at saturation of + 17.3 dBm with a variation of ±1 dB and a peak drain efficiency of 34% with a variation of ± 2% over the band are achieved. A fractional BW of 59% is also noted from the measurement of a QFN packaged version.